|分析点 / 参数||分析物||测量范围||适合分析仪|
|腐蚀槽 Etching Bath||氢氟酸 HF||-||OMA 过程分析仪|
推荐使用： OMA 过程分析仪
Wafers are immersed in a bath of etchant solution—often diluted hydroflouric acid—to remove SiO2 or other extremely thin layers from the surface. The HF etch rate, described in Å/sec, must be held constant to avoid scrapped wafers, but the rate varies with HF concentration in the solution. Errors in etchant dilution ratio stem from improper initial mixing, residual water from previous rinses, and using a single bath with multiple acid ratios for different production recipes.
Solution: the OMA continuously monitors HF concentration in the etching agent solution and provides an alarm output for when the sample ranges outside of specification.